GROOVE GAINASP LASER ON SEMI-INSULATING INPYU KL; KOREN U; CHEN TR et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 21; PP. 790-792; BIBL. 7 REF.Article

INGAASP/INP BH LASERS ON P-TYPE INP SUBSTRATESNAKANO Y; TAKAHEI K; NOGUCHI Y et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 18; PP. 645-646; BIBL. 9 REF.Article

HYDROGENATION ACTIVITY OF METAL PHOSPHIDES AND PROMOTING EFFECT OF OXYGENNOZAKI F; TOKUMI M.1983; JOURNAL OF CATALYSIS; ISSN 0021-9517; USA; DA. 1983; VOL. 79; NO 1; PP. 207-210; BIBL. 3 REF.Article

CRYSTAL CHEMISTRY OF M₁₂P₇ PHASES IN RELATION WITH THE M₂P PHOSPHIDESMAAREF S; MADAR R; CHAUDOUET P et al.1981; J. SOLID STATE CHEM.; ISSN 0022-4596; GBR; DA. 1981; VOL. 40; NO 2; PP. 131-135; BIBL. 11 REF.Article

FACET DEGRADATION AND PASSIVATION OF INGAASP/INP LASERSFUKUDA M; TAKAHEI K; IWANE G et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 41; NO 1; PP. 18-21; BIBL. 10 REF.Article

MECHANISM OF ASYMMETRIC LONGITUDINAL MODE COMPETITION IN INGAASP/INP LASERSISHIKAWA H; YANO M; TAKUSAGAWA M et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 553-555; BIBL. 22 REF.Article

NEW CHEMICAL ETCHING SOLUTION FOR INP AND GALNASP GRATINGSSAITOH T; MIKAMI O; NAKAGOME H et al.1982; ELECTRONICS LETTERS; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 10; PP. 408-409; BIBL. 7 REF.Article

CURRENT DEPENDENCE OF TEMPERATURE RISE IN CW OPERATED GAINASP/INP DH LASER DIODESBROSSON P; THOMPSON GHB.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 25-26; PP. 957-958; BIBL. 6 REF.Article

LOW THRESHOLD CURRENT DENSITY INGAASP/INP LASERS GROWN IN A VERTICAL LIQUID PHASE EPITAXIAL SYSTEMTAMARI N; BALLMAN AA.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 185-187; BIBL. 12 REF.Article

VERY LOW DARK CURRENT P-P-P BASE INGAASP/INP PHOTOTRANSISTORSKOBAYASHI M; SAKAI S; UMENO M et al.1983; JAPANESE JOURNAL OF APPLIED PHYSICS; ISSN 0021-4922; JPN; DA. 1983; VOL. 22; NO 3; PART. 2; PP. L159-L161; BIBL. 8 REF.Article

DARSTELLUNG, EIGENSCHAFTEN UND KRISTALLSTRUKTUR VON CU₂P₇ UND STRUKTURVERFEINERUNGEN VON CUP₂ UND AGP₂ = PREPARATION, PROPRIETES ET STRUCTURE CRISTALLINE DE CU₂P₇ ET AFFINEMENTS DE STRUCTURE DE CUP₂ ET AGP₂MOLLER MH; JEITSCHKO W.1982; ZEITSCHRIFT FUER ANORGANISCHE UND ALLGEMEINE CHEMIE; ISSN 0044-2313; DDR; DA. 1982; VOL. 491; NO 8; PP. 225-236; ABS. ENG; BIBL. 35 REF.Article

A NOVEL TECHNIQUE FOR GAINASP/INP BURIED HETEROSTRUCTURE LASER FABRICATIONLIAU ZL; WALPOLE JN.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 7; PP. 568-570; BIBL. 15 REF.Article

HYPERSURFACE OF EINSTEIN MANIFOLDSKOISO N.1981; ANN. SCI. EC. NORM. SUPER.; ISSN 0012-9593; FRA; DA. 1981; VOL. 14; NO 4; PP. 433-443; BIBL. 11 REF.Article

DIRECT MODULATION OF INGA ASP/INP DOUBLE HETEROSTRUCTURE LASERS.AKIBA S; SAKAI K; YAMAMOTO T et al.1978; ELECTRON. LETTERS; G.B.; DA. 1978; VOL. 14; NO 6; PP. 197-198; BIBL. 9 REF.Article

SPATIALLY RESOLVED PHOTOLUMINESCENCE CHARACTERIZATION AND OPTICALLY INDUCED DEGRADATION OF IN_1-XGA_XAS_YP_1-Y DH LASER MATERIALJOHNSTON WD JR; EPPS GY; NAHORY RE et al.1978; APPL. PHYS. LETTERS; USA; DA. 1978; VOL. 33; NO 12; PP. 992-994; BIBL. 9 REF.Article

DIRECT OBSERVATION OF ELECTRON LEAKAGE IN INGAASP/INP DOUBLE HETEROSTRUCTUREYAMAKOSHI S; SANADA T; WADA O et al.1982; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1982; VOL. 40; NO 2; PP. 144-146; BIBL. 16 REF.Article

DUAL WAVELENGTH INGAASP/INP TJS LASERSSAKAI S; AOKI T; UMENO M et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 1; PP. 18-20; BIBL. 6 REF.Article

GAINASP/INP DH LASER ON SEMI-INSULATING INP SUBSTRATE WITH TERRACE STRUCTUREMATSOKA T; SUZUKI Y; NOGUCHI Y et al.1982; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1982; VOL. 18; NO 9; PP. 359-361; BIBL. 5 REF.Article

INGAASP/INP BURIED-HETEROSTRUCTURE LASERS (LAMBDA =1.5 MU M) WITH CHEMICALLY ETCHED MIRRORSADACHI S; KAWAGUCHI H; TAKAHEI K et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5843-5845; BIBL. 13 REF.Article

ACHIEVEMENT OF 1 MHZ FREQUENCY STABILITY OF SEMICONDUCTOR LASERS BY DOUBLE-LOOP AFC SCHEMEKIKUCHI K; OKOSHI T; KAWANISHI S et al.1981; ELECTRON. LETT.; ISSN 0013-5194; GBR; DA. 1981; VOL. 17; NO 15; PP. 515-516; BIBL. 8 REF.Article

ANALYSIS OF ELECTRICAL, THRESHOLD, AND TEMPERATURE CHARACTERISTICS OF INGAASP/INP DOUBLE-HETEROJUNCTION LASERSYANO M; IMAI H; TAKUSAGAWA M et al.1981; IEEE J. QUANTUM ELECTRON.; ISSN 0018-9197; USA; DA. 1981; VOL. 17; NO 9; PP. 1954-1963; BIBL. 45 REF.Article

NEW WAVELENGTH DEMULTIPLEXING INGAASP/INP PHOTODIODESTOBE M; SAKAI S; UMENO M et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; SUPPL. 2; PP. 213-216; BIBL. 8 REF.Conference Paper

TEMPERATURE DEPENDENCE OF INGAASP DOUBLE-HETEROSTRUCTURE LASER CHARACTERISTICSNAHURY RE; POLLOCK MA; DE WINTER JC et al.1979; ELECTRON. LETTERS; GBR; DA. 1979; VOL. 15; NO 21; PP. 695-696; BIBL. 12 REF.Article

A STUDY OF FAR-FIELD PATTERNS FROM HIGH PERFORMANCE 1.3-MU M INGAASP-INP EDGE-EMITTING LED'SDEVOLDERE P; GILLERON M; CHARIL J et al.1983; IEEE TRANSACTIONS ON ELECTRON DEVICES; ISSN 0018-9383; USA; DA. 1983; VOL. 30; NO 4; PP. 354-360; BIBL. 20 REF.Article

CHEMICALLY ETCHED-MIRROR GAINASP/IN LASERS. REVIEWIGA K; MILLER BI.1982; IEEE J. QUANTUM. ELECTRON.; ISSN 0018-9197; USA; DA. 1982; VOL. 18; NO 1; PP. 22-29; BIBL. 45 REF.Article